Infineon
IPP120N04S3-02
Power Field-Effect Transistor, 120A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
PackageTO-220-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP120N04S3-02 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
14.3nF
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
2.3mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
57ns
Turn-On Delay Time
35ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPP120N04S3-02 Datasheet
Download the complete datasheet for Infineon IPP120N04S3-02 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.