N-Channel Power MOSFET, 100V Vdss, 53A continuous drain current, and 16.5mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting. It offers a maximum power dissipation of 100W and operates across a wide temperature range from -55°C to 175°C. The component is halogen-free, lead-free, RoHS compliant, and REACH SVHC compliant.
PackageTO-220
Current Rating53A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP16CN10NGXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 53A |
| Current Rating | 53A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.22nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 16.5mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP16CN10NGXKSA1 Datasheet
Download the complete datasheet for Infineon IPP16CN10NGXKSA1 to view detailed technical specifications.
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