N-Channel Power MOSFET featuring 250V drain-source voltage and 64A continuous drain current. Offers low on-state resistance of 20mΩ (Rds On Max) and 17.5mΩ (Drain to Source Resistance). Designed for through-hole mounting in a TO-220 package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 300W. It is RoHS compliant and Halogen Free.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP200N25N3GXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 250V |
| Halogen Free | Halogen Free |
| Input Capacitance | 7.1nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| On-State Resistance | 20mR |
| Package Quantity | 500 |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP200N25N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP200N25N3GXKSA1 to view detailed technical specifications.
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