IPP50CN10NGXKSA1

Name: IPP50CN10NGXKSA1 Infineon
Brand: Infineon
SKU: IPP50CN10NGXKSA1

Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power44W

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Infineon IPP50CN10NGXKSA1 technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	20A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	38mR
Drain to Source Voltage (Vdss)	100V
Fall Time	3ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.09nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	44W
Mount	Through Hole
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	44W
Rds On Max	50mR
RoHS Compliant	No
Series	OptiMOS™

RoHS	Not Compliant

This datasheet cannot be embedded due to technical restrictions.