N-channel power MOSFET featuring 100V drain-source breakdown voltage and 50A continuous drain current. Offers low on-state resistance of 15.7mΩ at a 10V gate-source voltage. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 100W. Packaged in a TO-220-3 configuration, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageTO-220-3
PolarityN-CHANNEL
Power100W
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Technical Specifications
Infineon IPP50N10S3L16AKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15.7mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.65mm |
| Input Capacitance | 4.18nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| On-State Resistance | 15.7mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 15.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 10ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP50N10S3L16AKSA1 Datasheet
Download the complete datasheet for Infineon IPP50N10S3L16AKSA1 to view detailed technical specifications.
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