N-Channel Power MOSFET, 500V Drain-Source Voltage, 18.5A Continuous Drain Current, and 190mΩ Rds On. Features include 127W Power Dissipation, 7.5ns Fall Time, and 9.5ns Turn-On Delay Time. This silicon, Metal-oxide Semiconductor FET is housed in a TO-220 package with through-hole mounting. It is RoHS compliant, Halogen Free, and operates from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power127W
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Technical Specifications
Infineon IPP50R190CEXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 18.5A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.137nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 127W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 127W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ CE |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 9.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP50R190CEXKSA1 Datasheet
Download the complete datasheet for Infineon IPP50R190CEXKSA1 to view detailed technical specifications.
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