N-channel power MOSFET featuring 500V drain-source breakdown voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 199mΩ drain-to-source resistance. Designed for high-power applications, it boasts a maximum power dissipation of 139W and operates within a temperature range of -55°C to 150°C. Packaged in a TO-220AB, this RoHS compliant component is ideal for demanding electronic circuits.
PackageTO-220-3
PolarityN-CHANNEL
Power139W
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Technical Specifications
Infineon IPP50R199CP technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 199mR |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 1.8nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Rds On Max | 199mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP50R199CP Datasheet
Download the complete datasheet for Infineon IPP50R199CP to view detailed technical specifications.
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