N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 10A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.35ohm drain-to-source resistance and 89W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range. Key electrical characteristics include a 550V dual supply voltage, 20V gate-to-source voltage, and 3V threshold voltage.
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Infineon IPP50R350CP technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 550V |
| Dual Supply Voltage | 550V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 1.02nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 4.57mm |
| RoHS | Compliant |
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