The IPP60R125C6XKSA1 is a N-channel MOSFET from Infineon with a maximum drain to source voltage of 600V and a continuous drain current of 30A. It features a power dissipation of 219W and is packaged in a TO-220 case with a through hole mount. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The MOSFET has a fall time of 7ns and a turn-off delay time of 83ns, with a turn-on delay time of 15ns.
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Infineon IPP60R125C6XKSA1 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 219W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 83ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPP60R125C6XKSA1 to view detailed technical specifications.
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