N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 165mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 192W. Designed for efficient switching, it exhibits a fall time of 5ns and turn-on delay of 12ns. The component is housed in a TO-263AB package, is RoHS compliant, and operates within a temperature range of -55°C to 150°C.
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Infineon IPP60R165CPXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 165mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 192W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Rds On Max | 165mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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