Infineon
IPP60R190E6
Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PackageTO-220-3
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Technical Specifications
Infineon IPP60R190E6 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
20.2A
Drain to Source Voltage (Vdss)
600V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
1.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
151W
Package Quantity
500
Packaging
Rail/Tube
Rds On Max
190mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
90ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPP60R190E6 Datasheet
Download the complete datasheet for Infineon IPP60R190E6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.