N-Channel Power MOSFET, 600V Drain-Source Voltage, 190mΩ Rds On, and 20.2A Continuous Drain Current. This silicon, Metal-oxide Semiconductor FET features a TO-220AB package for through-hole mounting, offering a maximum power dissipation of 151W. Key switching characteristics include a 7ns fall time, 15ns turn-on delay, and 45ns turn-off delay. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant, Halogen Free, and Lead Free.
PackageTO-220
MountingThrough Hole
Power151W
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Technical Specifications
Infineon IPP60R190P6XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 20.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.75nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 151W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 151W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ P6 |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP60R190P6XKSA1 Datasheet
Download the complete datasheet for Infineon IPP60R190P6XKSA1 to view detailed technical specifications.
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