The IPP60R280C6XKSA1 is a N-CHANNEL MOSFET from Infineon with a maximum drain to source breakdown voltage of 600V and a continuous drain current of 13.8A. It features a drain to source resistance of 280mR and a maximum power dissipation of 104W. The device is packaged in a TO-220-3 package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
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Infineon IPP60R280C6XKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 280mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 950pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 13ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPP60R280C6XKSA1 to view detailed technical specifications.
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