The IPP60R600E6XKSA1 is a 600V power MOSFET from Infineon, featuring a TO-220 package and through hole mount. It has a maximum continuous drain current of 7.3A and a maximum drain to source voltage of 600V. The device operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The MOSFET has a maximum power dissipation of 63W and a maximum Rds on resistance of 600mR.
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Infineon IPP60R600E6XKSA1 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 63W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPP60R600E6XKSA1 to view detailed technical specifications.
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