The IPP65R045C7 is a single MOSFET from Infineon with a maximum drain to source breakdown voltage of 650V and a continuous drain current of 46A. It features a low drain to source resistance of 45mR and a maximum power dissipation of 227W. The device is packaged in a TO-220-3 flange mount and is compliant with RoHS and Reach SVHC regulations. It operates within a temperature range of -55°C to 150°C.
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Infineon IPP65R045C7 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 650V |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 227W |
| Rds On Max | 45mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 82ns |
| RoHS | Compliant |
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