The IPP65R190C7FKSA1 is a 650V N-Channel MOSFET from Infineon with a maximum continuous drain current of 13A. It features a TO-220 package and is designed for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The MOSFET has a maximum power dissipation of 72W and a maximum on-resistance of 190mR. It also has a fast switching time with a fall time of 9ns and a turn-off delay time of 54ns.
Infineon IPP65R190C7FKSA1 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 1.15nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 72W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPP65R190C7FKSA1 to view detailed technical specifications.
No datasheet is available for this part.
