N-Channel Power MOSFET, 650V Drain-Source Voltage, 190mΩ Drain-Source Resistance, and 20.2A Continuous Drain Current. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting. It operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 151W. The component is Halogen Free, Lead Free, and RoHS Compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP65R190E6XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 20.2A |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 1.62nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 151W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 112ns |
| Turn-On Delay Time | 12ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP65R190E6XKSA1 Datasheet
Download the complete datasheet for Infineon IPP65R190E6XKSA1 to view detailed technical specifications.
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