N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 600mΩ Rds On. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 7.3A and a maximum power dissipation of 63W. Designed for through-hole mounting in a TO-220 package, it boasts a 13ns fall time and 12ns turn-on delay time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is halogen-free and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPP65R600C6XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP65R600C6XKSA1 Datasheet
Download the complete datasheet for Infineon IPP65R600C6XKSA1 to view detailed technical specifications.
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