N-channel enhancement mode power MOSFET designed for automotive applications. Features a 100V drain-source voltage and 70A continuous drain current. Housed in a 3-pin TO-220 package with a tab, offering through-hole mounting. Boasts a low drain-source on-resistance of 11.3 mOhm at 10V and a maximum power dissipation of 125W. Operates across a wide temperature range from -55°C to 175°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP70N10S3-12 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.4
Package Height (mm)
9.25
Seated Plane Height (mm)
20.2
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
70A
Maximum Drain Source Resistance
11.3@10VmOhm
Typical Gate Charge @ Vgs
51@10VnC
Typical Gate Charge @ 10V
51nC
Typical Input Capacitance @ Vds
3350@25VpF
Maximum Power Dissipation
125000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IPP70N10S3-12 Datasheet
Download the complete datasheet for Infineon IPP70N10S3-12 to view detailed technical specifications.
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