
The IPP80N06S207AKSA1 is a high-power N-channel MOSFET from Infineon, featuring a maximum drain current of 80A and a breakdown voltage of 55V. It has a maximum operating temperature range of -55°C to 175°C and is packaged in a TO-220-3 case. The device is halogen-free and has a maximum power dissipation of 250W. It is suitable for high-current applications and is compliant with halogen-free requirements.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.65mm |
| Input Capacitance | 3.4nF |
| Length | 10mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 210W |
| Rds On Max | 6.6mR |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 18ns |
| Width | 4.4mm |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon IPP80N06S207AKSA1 to view detailed technical specifications.
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