N-channel silicon MOSFET, 900V drain-source breakdown voltage, 5.7A continuous drain current, and 1 ohm drain-source resistance. Features a TO-220AB package with through-hole mounting, 89W power dissipation, and a maximum operating temperature of 150°C. Includes 850pF input capacitance, 35ns fall time, 70ns turn-on delay, and 400ns turn-off delay. This component is RoHS and Halogen Free compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power89W
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Technical Specifications
Infineon IPP90R1K0C3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 900V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 1R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP90R1K0C3 Datasheet
Download the complete datasheet for Infineon IPP90R1K0C3 to view detailed technical specifications.
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