N-channel silicon MOSFET, 900V drain-source breakdown voltage, 5.7A continuous drain current, and 1 ohm drain-source resistance. Features a TO-220AB package with through-hole mounting, 89W power dissipation, and a maximum operating temperature of 150°C. Includes 850pF input capacitance, 35ns fall time, 70ns turn-on delay, and 400ns turn-off delay. This component is RoHS and Halogen Free compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power89W
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Technical Specifications
Infineon IPP90R1K0C3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
5.7A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
900V
Dual Supply Voltage
900V
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
850pF
Lead Free
Lead Free
Max Dual Supply Voltage
900V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
89W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
89W
Rds On Max
1R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Turn-Off Delay Time
400ns
Turn-On Delay Time
70ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPP90R1K0C3 Datasheet
Download the complete datasheet for Infineon IPP90R1K0C3 to view detailed technical specifications.
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