N-Channel Power MOSFET, 900V Vdss, 15A Continuous Drain Current, and 340mR Rds On. This silicon, Metal-oxide Semiconductor FET features a TO-220-3 package with through-hole termination. It offers a maximum power dissipation of 208W and operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and halogen-free.
PackageTO-220-3
Power208W
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Technical Specifications
Infineon IPP90R340C3XKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 340mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP90R340C3XKSA1 Datasheet
Download the complete datasheet for Infineon IPP90R340C3XKSA1 to view detailed technical specifications.
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