N-channel enhancement mode power MOSFET featuring 120V drain-source voltage and 75A continuous drain current. This single-element transistor utilizes OptiMOS process technology and offers a low drain-source on-resistance of 11mΩ at 10V. Packaged in a TO-251 (3+Tab) through-hole configuration with a 2.28mm pin pitch, it operates across a wide temperature range of -55°C to 175°C.
PackageTO-251
MountingThrough Hole
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Technical Specifications
Infineon IPS110N12N3 G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | TO-251 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 6.22 |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 120V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 75A |
| Maximum Drain Source Resistance | 11@10VmOhm |
| Typical Gate Charge @ Vgs | 49@10VnC |
| Typical Gate Charge @ 10V | 49nC |
| Typical Input Capacitance @ Vds | 3240@60VpF |
| Maximum Power Dissipation | 136000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPS110N12N3 G Datasheet
Download the complete datasheet for Infineon IPS110N12N3 G to view detailed technical specifications.
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