N-channel power MOSFET featuring 60V drain-source voltage and 0.75mΩ Rds(on) for efficient power switching. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 300A and a maximum power dissipation of 375W. Designed for surface mounting, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon IPT007N06NATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 300A |
| Drain to Source Voltage (Vdss) | 60V |
| Halogen Free | Halogen Free |
| Input Capacitance | 16nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 0.75mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPT007N06NATMA1 Datasheet
Download the complete datasheet for Infineon IPT007N06NATMA1 to view detailed technical specifications.
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