N-channel power MOSFET featuring 80V drain-source voltage and a low on-resistance of 0.0012 ohms. This single-element silicon device offers a continuous drain current capability of 52A. Designed with Metal-oxide Semiconductor Field-Effect Transistor technology, it is housed in an 8-pin HSOF-8-1 package.
Quick Jump:
Technical Specifications
Infineon IPT012N08N5ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPT012N08N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPT012N08N5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.