N-channel power MOSFET featuring 100V drain-source voltage and a low on-resistance of 0.0015 ohms. This single-element, 8-terminal device offers a continuous drain current capability of 32A. Constructed with silicon and metal-oxide semiconductor technology, it is housed in an HSOF-8 package.
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Technical Specifications
Infineon IPT015N10N5ATMA1 technical specifications.
General
| Number of Terminals | 8 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPT015N10N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPT015N10N5ATMA1 to view detailed technical specifications.
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