This N-channel power MOSFET uses OptiMOS™ 3 technology and is rated for a maximum drain-source voltage of 100 V. It provides a maximum RDS(on) of 2 mΩ at 10 V gate drive and supports up to 300 A continuous drain current at 25°C, with pulsed drain current up to 1200 A. The device is offered in the TOLL (HSOF-8) package and operates across a junction temperature range of -55°C to 175°C. Typical listed electrical characteristics include 156 nC gate charge, 11200 pF input capacitance, 2010 pF output capacitance, and 375 W maximum power dissipation. Standard manufacturer packaging is tape and reel with a packing size of 2000 pieces.
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| Number of Terminals | 8 |
| Terminal Position | SINGLE |
| Pin Count | 8 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | No |
| REACH | not_compliant |
| Military Spec | False |
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