High-performance N-channel Power MOSFET featuring 100V drain-source voltage and 300A continuous drain current. Surface mount device with a maximum power dissipation of 375W and a low on-resistance of 2mΩ. Operates across a wide temperature range from -55°C to 175°C. Halogen-free and RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon IPT020N10N3ATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 300A |
| Drain to Source Voltage (Vdss) | 100V |
| Halogen Free | Halogen Free |
| Input Capacitance | 11.2nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPT020N10N3ATMA1 Datasheet
Download the complete datasheet for Infineon IPT020N10N3ATMA1 to view detailed technical specifications.
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