High-performance N-channel Power MOSFET featuring 100V drain-source voltage and 300A continuous drain current. Surface mount device with a maximum power dissipation of 375W and a low on-resistance of 2mΩ. Operates across a wide temperature range from -55°C to 175°C. Halogen-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPT020N10N3ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 300A |
| Drain to Source Voltage (Vdss) | 100V |
| Halogen Free | Halogen Free |
| Input Capacitance | 11.2nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPT020N10N3ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
