Power Field-Effect Transistor, 31A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Infineon IPT020N10N5ATMA1 technical specifications.
| Number of Terminals | 8 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
