This N-channel superjunction power MOSFET is rated for 600 V drain-source breakdown voltage and 16 mΩ maximum on-state resistance at 25°C. It is housed in the PG-HSOF-8 package and is offered in tape-and-reel packaging. The device supports up to 142 A continuous drain current at 25°C, 505 A pulsed drain current, and operation from -55°C to 150°C junction temperature. Typical dynamic characteristics include 171 nC total gate charge, 7545 pF input capacitance, and 180 ns reverse recovery time.
Checking distributor stock and pricing after the page loads.
| Drain-Source Breakdown Voltage | 600V |
| On-State Resistance (max) | 16mΩ |
| Continuous Drain Current (TC=25°C) | 142A |
| Continuous Drain Current (TC=100°C) | 89A |
| Pulsed Drain Current | 505A |
| Gate Threshold Voltage | 3.7 to 4.7V |
| Total Gate Charge | 171nC |
| Input Capacitance | 7545pF |
| Output Capacitance | 91pF |
| Turn-On Delay Time | 29.4ns |
| Rise Time | 9ns |
| Turn-Off Delay Time | 125.7ns |
| Fall Time | 4.4ns |
| Reverse Recovery Time | 180 typ, 225 maxns |
| Reverse Recovery Charge | 1.54 typ, 2.31 maxµC |
| Thermal Resistance Junction-to-Case | 0.18K/W |
| Operating Junction Temperature | -55 to 150°C |
| Avalanche Energy Single Pulse | 297mJ |
| ESD Class (HBM) | 2 |
| RoHS | Compliant |
These are design resources that include the Infineon IPT60R016CM8
Application note for a 3.3 kW PSU (REF_3K3W_HFHD_PSU) with 98 W/inch³ power density, utilizing interleaved totem-pole PFC and GaN-based LLC stages for server applications.
