Power Field-Effect Transistor, 30A I(D), 25V, 0.0101ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, TO-251, 3 PIN
Sign in to ask questions about the Infineon IPU07N03LA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPU07N03LA technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance | 2.653nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Rds On Max | 6.5mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| DC Rated Voltage | 25V |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon IPU07N03LA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
