Infineon
IPU07N03LA
Power Field-Effect Transistor, 30A I(D), 25V, 0.0101ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, TO-251, 3 PIN
Power Field-Effect Transistor, 30A I(D), 25V, 0.0101ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, TO-251, 3 PIN
PackageTO-251-3
Current Rating30A
MountingThrough Hole
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Technical Specifications
Infineon IPU07N03LA technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance | 2.653nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Rds On Max | 6.5mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon IPU07N03LA Datasheet
Download the complete datasheet for Infineon IPU07N03LA to view detailed technical specifications.
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