N-channel Power MOSFET featuring CoolMOS technology, designed for through-hole mounting in a TO-247 package. This single-element transistor offers a maximum drain-source voltage of 550V and a continuous drain current of 62A. Key specifications include a low drain-source on-resistance of 45mΩ at 10V and a maximum power dissipation of 431W. Operating temperature range is from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW50R045CP technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9 |
| Package Width (mm) | 5.03 |
| Package Height (mm) | 20.95 |
| Seated Plane Height (mm) | 25.24 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 550V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 62A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 45@10VmOhm |
| Typical Gate Charge @ Vgs | 150@10VnC |
| Typical Gate Charge @ 10V | 150nC |
| Typical Input Capacitance @ Vds | 7900@100VpF |
| Maximum Power Dissipation | 431000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Infineon IPW50R045CP Datasheet
Download the complete datasheet for Infineon IPW50R045CP to view detailed technical specifications.
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