N-Channel Power MOSFET, 600V Vdss, 60A Continuous Drain Current, and 45mΩ Rds On. This silicon, Metal-oxide Semiconductor FET features a TO-247 package for through-hole mounting and offers a maximum power dissipation of 431W. Key switching characteristics include a 30ns turn-on delay, 10ns fall time, and 100ns turn-off delay, with an input capacitance of 6.8nF. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is designed for demanding power applications.
PackageTO-247
MountingThrough Hole
Power431W
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Technical Specifications
Infineon IPW60R045CPFKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 431W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 431W |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW60R045CPFKSA1 Datasheet
Download the complete datasheet for Infineon IPW60R045CPFKSA1 to view detailed technical specifications.
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