N-Channel Power MOSFET, 600V Vdss, 37.9A continuous drain current, and 99mR on-state resistance. Features a TO-247-3 plastic package with a maximum power dissipation of 278W and an operating temperature range of -55°C to 150°C. Includes a 6ns fall time, 15ns turn-on delay, and 75ns turn-off delay. This silicon metal-oxide semiconductor FET is RoHS compliant and lead-free.
PackageTO-247-3
Power278W
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Technical Specifications
Infineon IPW60R099C6FKSA1 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 37.9A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 2.66nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 278W |
| Number of Elements | 1 |
| On-State Resistance | 99mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 278W |
| Radiation Hardening | No |
| Rds On Max | 99mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 15ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW60R099C6FKSA1 Datasheet
Download the complete datasheet for Infineon IPW60R099C6FKSA1 to view detailed technical specifications.
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