This device is a 600 V CoolMOS™ C7 N-channel power MOSFET with a maximum continuous drain current of 22 A and a typical RDS(on) of 99 mΩ. It is a superjunction silicon MOSFET intended for industrial power conversion applications. Infineon positions it for high-efficiency PFC and LLC topologies. The orderable version IPW60R099C7XKSA1 is supplied in the PG-TO247-3 package. The product page identifies it as lead-free and RoHS compliant.
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Infineon IPW60R099C7 technical specifications.
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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