N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 30A continuous drain current. This single-element transistor utilizes CoolMOS process technology and offers a low on-resistance of 125mΩ at 10V. Packaged in a 3-pin TO-247 through-hole configuration with a tab, it supports a maximum power dissipation of 219W and operates from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon IPW60R125C6 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 16.13(Max) |
| Package Width (mm) | 5.21(Max) |
| Package Height (mm) | 21.1(Max) |
| Seated Plane Height (mm) | 25.57(Max) |
| Pin Pitch (mm) | 5.44 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 30A |
| Maximum Drain Source Resistance | 125@10VmOhm |
| Typical Gate Charge @ Vgs | 96@10VnC |
| Typical Gate Charge @ 10V | 96nC |
| Typical Input Capacitance @ Vds | 2127@100VpF |
| Maximum Power Dissipation | 219000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPW60R125C6 Datasheet
Download the complete datasheet for Infineon IPW60R125C6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.