This N-channel superjunction power MOSFET is rated for 600 V and 23.8 A in a TO247 through-hole package. It features a maximum RDS(on) of 160 mΩ at 25°C and 10 V gate drive, a typical total gate charge of 44 nC, and 176 W maximum power dissipation. The device operates over a junction temperature range of -55°C to 150°C and specifies thermal resistance of 0.71 K/W junction-to-case and 62 K/W junction-to-ambient. It belongs to the CoolMOS™ P6 family and is intended for efficient hard- and soft-switching power conversion designs.
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Infineon IPW60R160P6 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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