N-channel enhancement mode power MOSFET featuring 650V drain-source voltage and 20.2A continuous drain current. This single-element transistor utilizes CoolMOS C6 process technology, offering a low 190mΩ drain-source on-resistance at 10V gate-source voltage. Packaged in a TO-247 through-hole configuration with 3 pins and a tab, it supports a maximum power dissipation of 151W and operates across a temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW60R190C6 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9 |
| Package Width (mm) | 5.03 |
| Package Height (mm) | 20.9 |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS C6 |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 20.2A |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Gate Charge @ Vgs | 7.6@10VnC |
| Typical Gate Charge @ 10V | 7.6nC |
| Typical Input Capacitance @ Vds | 1400@100VpF |
| Maximum Power Dissipation | 151000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPW60R190C6 Datasheet
Download the complete datasheet for Infineon IPW60R190C6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.