Infineon
IPW65R045C7
Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247-3
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Technical Specifications
Infineon IPW65R045C7 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Voltage (Vdss) | 650V |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 227W |
| Packaging | Rail/Tube |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3.5V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R045C7 Datasheet
Download the complete datasheet for Infineon IPW65R045C7 to view detailed technical specifications.
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