N-channel silicon power MOSFET featuring 650V drain-source breakdown voltage and 46A continuous drain current. This through-hole mounted component offers a low 45mΩ on-state resistance and a maximum power dissipation of 227W. Designed for high-efficiency applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-247 plastic package. Key switching characteristics include a 7ns fall time, 20ns turn-on delay, and 82ns turn-off delay.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW65R045C7FKSA1 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
46A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
650V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
25.4mm
Input Capacitance
4.34nF
Lead Free
Lead Free
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
227W
Mount
Through Hole
Number of Channels
1
On-State Resistance
45mR
Package Quantity
240
Packaging
Rail/Tube
Rds On Max
45mR
RoHS Compliant
Yes
Series
CoolMOS™ C7
Turn-Off Delay Time
82ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPW65R045C7FKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R045C7FKSA1 to view detailed technical specifications.
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