N-channel silicon power MOSFET featuring 650V drain-source breakdown voltage and 46A continuous drain current. This through-hole mounted component offers a low 45mΩ on-state resistance and a maximum power dissipation of 227W. Designed for high-efficiency applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-247 plastic package. Key switching characteristics include a 7ns fall time, 20ns turn-on delay, and 82ns turn-off delay.
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| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 25.4mm |
| Input Capacitance | 4.34nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227W |
| Mount | Through Hole |
| Number of Channels | 1 |
| On-State Resistance | 45mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 20ns |
| RoHS | Compliant |
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