Infineon
IPW65R080CFD
Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW65R080CFD technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
43.3A
Drain to Source Voltage (Vdss)
650V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
5.03nF
Lead Free
Lead Free
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
391W
Mount
Through Hole
Package Quantity
240
Packaging
Rail/Tube
Rds On Max
80mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
4V
Turn-Off Delay Time
85ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPW65R080CFD Datasheet
Download the complete datasheet for Infineon IPW65R080CFD to view detailed technical specifications.
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