N-channel Power MOSFET featuring 650V drain-source voltage and 43.3A continuous drain current. This single-element device utilizes CoolMOS process technology and offers a low 80mΩ drain-source resistance at 10V. Packaged in a 3-pin TO-247 plastic through-hole configuration, it supports a maximum power dissipation of 391W and operates within a -40°C to 150°C temperature range.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW65R080CFDA technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
16.13(Max)
Package Width (mm)
5.21(Max)
Package Height (mm)
21.1(Max)
Seated Plane Height (mm)
25.57(Max)
Pin Pitch (mm)
5.44
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
CoolMOS
Maximum Drain Source Voltage
650V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
43.3A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
80@10VmOhm
Typical Gate Charge @ Vgs
161@10VnC
Typical Gate Charge @ 10V
161nC
Typical Input Capacitance @ Vds
4440@100VpF
Maximum Power Dissipation
391000mW
Min Operating Temperature
-40°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IPW65R080CFDA Datasheet
Download the complete datasheet for Infineon IPW65R080CFDA to view detailed technical specifications.
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