N-channel Power MOSFET featuring 650V breakdown voltage and 0.08 ohm on-resistance. This single-element silicon device offers a continuous drain current of 43.3A and operates across a wide temperature range from -55°C to 150°C. Encased in a TO-247 plastic package, it utilizes a metal-oxide semiconductor field-effect transistor construction with three terminals.
Quick Jump:
Technical Specifications
Infineon IPW65R080CFDFKSA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPW65R080CFDFKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R080CFDFKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.