Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
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Infineon IPW90R800C3FKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Nominal Vgs | 3V |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
| RoHS | Compliant |
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