This 600 V N-channel superjunction power MOSFET is designed for hard-switching PFC and LLC topologies. It provides 40 mOhm typical RDS(on), 50 A continuous drain current, 211 A pulsed drain current, and 107 nC typical total gate charge. The device is housed in a 4-pin TO-247 through-hole package and operates from -55 °C to 150 °C. Maximum power dissipation is 227 W, with thermal resistance of 0.55 K/W junction-to-case and 62 K/W junction-to-ambient.
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| Drain-Source Voltage | 600V |
| Continuous Drain Current | 50A |
| Pulsed Drain Current | 211A |
| On-Resistance RDS(on) | 40mOhm |
| Total Gate Charge | 107nC |
| Gate Threshold Voltage | 3.5V |
| Power Dissipation | 227W |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 150°C |
| Thermal Resistance Junction-to-Ambient | 62K/W |
| Thermal Resistance Junction-to-Case | 0.55K/W |
| Mounting | THT |
| Package | TO247 4-pin |
| Pin Count | 4Pins |
| Polarity | N |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
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Application note for a 2.5 kW CCM PFC evaluation board using the ICE3PCS01G controller and TO-247 4-pin CoolMOS C7 MOSFETs to improve efficiency and signal quality.
