High-voltage high-side and low-side gate driver IC for driving N-channel MOSFETs or IGBTs in half-bridge configurations up to 600 V. It operates from a 10 V to 20 V gate-drive supply and provides typical 1.9 A source and 2.3 A sink output current with matched propagation delays of 180 ns turn-on and 220 ns turn-off. The device supports bootstrap operation, tolerates negative transient voltage, and includes undervoltage lockout on both channels. Logic inputs are compatible with 3.3 V and 5 V control signals, and the device is specified for operation from -40 °C to 125 °C in a 14-pin SOIC package.
Sign in to ask questions about the Infineon IR21814STRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IR21814STRPBF technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 14 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G14 |
| Width | 3.9 |
| Length | 8.65 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 15 |
| Supply Voltage-Min | 10 |
| Supply Voltage-Max | 20 |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8542.39.00.01 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IR21814STRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
