This device is a 100 V N-channel HEXFET power MOSFET in a TO-220AB package designed for high-current switching applications. It features a typical drain-to-source on-resistance of 7.2 mΩ and a maximum of 8.6 mΩ at VGS = 10 V, with continuous drain current ratings up to 97 A at 25 °C case temperature. The MOSFET supports a gate-to-source voltage of ±20 V, operates over a junction temperature range of -55 °C to +175 °C, and provides low switching charge with 77 nC typical total gate charge. It is intended for motor drives, synchronous rectification, converters, inverters, and redundant power switching circuits. The device is lead-free, RoHS compliant, and halogen-free.
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Infineon IRF100B202 technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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