This device is an N-channel power MOSFET rated for 60 V drain-to-source voltage and 79 A continuous drain current at 25°C case temperature. It features very low drain-to-source on-resistance of 7.1 mΩ typical and 8.4 mΩ maximum at 10 V gate drive. The MOSFET supports ±20 V gate-to-source voltage, 315 A pulsed drain current, and operation up to 175°C junction temperature. It is intended for high-efficiency synchronous rectification, high-speed power switching, uninterruptible power supplies, and hard-switched high-frequency circuits. The datasheet identifies improved avalanche and dynamic dv/dt ruggedness, characterized capacitance and avalanche SOA, and enhanced body diode dv/dt and di/dt capability.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IRF1018EPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IRF1018EPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
