N-channel power MOSFET featuring a continuous drain current of 79A and a drain-source voltage of 60V. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0084 ohms. Designed for high-temperature operation with a maximum operating temperature of 175°C, it utilizes a D2PAK-3 package.
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Technical Specifications
Infineon IRF1018ESTRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRF1018ESTRLPBF Datasheet
Download the complete datasheet for Infineon IRF1018ESTRLPBF to view detailed technical specifications.
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