This device is an N-channel HEXFET power MOSFET supplied in a TO-220AB package for industrial applications. It is rated for 40 V drain-to-source voltage and features very low drain-to-source on-resistance of 2.7 mΩ typical and 3.7 mΩ maximum at 10 V gate drive. The part supports up to 120 A package-limited continuous drain current at 25°C case temperature, with fast switching performance and repetitive avalanche capability up to maximum junction temperature. It operates to a 175°C junction temperature and is specified as lead-free.
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| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
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